▎ 摘　　要

In this paper, we present a theoretical investigation of the energy transfer efficiency between InSb quantum dot (QD) and monolayer graphene, separated by a spacer. We discuss the integrand term of the Forster energy rate that involves imaginary part of the polarization function using the random phase approximation and the massless Dirac Fermi approximation. We report on a very large influence of the graphene monolayer on the energy transfer efficiency due to both size of the QD and the back -gate voltage of graphene. Particularly, it is evident that the energy transfer, which occurs from quantum dot to graphene monolayer, has a great impact on the decay time of the InSb QD-Graphene system. We find that the decay time is in magnitude of picosecond, which presents a striking feature shown in the case of InSb QD coupled to graphene. The fast decay time in the energy transfer is strongly affected either by changing the size of InSb QD or by the back -gate voltage of graphene. Thus, these two parameters provide a new way to control the optical properties of InSb QD-graphene. (C) 2017 Elsevier Ltd. All rights reserved.