▎ 摘　　要

The prospects of Terahertz (0.3 THz-5.0 THz) power generation with laterally doped hybrid Graphene/Si (SingleLayer (SLG), Bi-Layer (BLG) and Multi-Layer (MLG)) Mixed Tunneling Avalanche Transit Time (GL-h-MITATT) oscillator is explored through an indigenously developed and experimentally verified self-consistent, non-linear, 2D-quantum drift diffusion simulator. The paper also reports the reliability study and feasibility of its development in details. The validity of the model is established by comparing experimental observation with simulation data for 0.2THz Si-oscillator under similar electrical operating conditions. The role of parasitic series resistance in top and side contact GL-MITATT oscillators are further studied. It is interesting to observe that compared to top-contact technology, side-contact technology results in lower contact resistance. With the increasing graphene layer in active region, the power output (similar to 14 x 10(9) Wm(-2)), breakdown voltage (similar to 8V) and efficiency (similar to 40%) increase significantly. The novelty of the study is in considering the laterally doped active region with top and side contact technology in exotic ATT devices and subsequent impact ionization & band-gap engineering boosting in performance enhancement. Additionally, the effect of series resistance is considered to obtain much reliable large-signal RF power data from the device under test. To the best of authors' knowledge, this is the first report on DC and RF characterization of laterally doped Graphene/Si hybrid MITATT oscillators at THz region, by using an in-house simulator and corresponding fabrication feasibility.