• 文献标题:   Parity effect of bipolar quantum Hall edge transport around graphene antidots
  • 文献类型:   Article
  • 作  者:   MATSUO S, NAKAHARAI S, KOMATSU K, TSUKAGOSHI K, MORIYAMA T, ONO T, KOBAYASHI K
  • 作者关键词:  
  • 出版物名称:   SCIENTIFIC REPORTS
  • ISSN:   2045-2322
  • 通讯作者地址:   Kyoto Univ
  • 被引频次:   6
  • DOI:   10.1038/srep11723
  • 出版年:   2015

▎ 摘  要

Parity effect, which means that even-odd property of an integer physical parameter results in an essential difference, ubiquitously appears and enables us to grasp its physical essence as the microscopic mechanism is less significant in coarse graining. Here we report a new parity effect of quantum Hall edge transport in graphene antidot devices with pn junctions (PNJs). We found and experimentally verified that the bipolar quantum Hall edge transport is drastically affected by the parity of the number of PNJs. This parity effect is universal in bipolar quantum Hall edge transport of not only graphene but also massless Dirac electron systems. These results offer a promising way to design electron interferometers in graphene.