▎ 摘　　要

NOVELTY - The graphene-metal bonding structure has graphene layer (710,730'), and a metal layer which is set on the graphene layer. An intermediate material layer is set between the graphene layer and metal layer, and forms an edge-contact with the metal layer from boundary portions of material contained in the intermediate material layer that contacts the metal layer. The intermediate material layer includes carbon-based material or porous material with pores, crystalline material with crystal grains, and patterned graphene. USE - Graphene-metal bonding structure for semiconductor device (claimed). ADVANTAGE - Reduces the contact resistance between the intermediate material layer and metal layer, and the contact resistance caused by the Schottky barrier since a metal has work function similar to the electron affinity of the semiconductor. Improves the characteristics of the semiconductor device by applying the graphene-metal bonding structure to the semiconductor device. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a manufacturing method for graphene-metal bonding structure; and (2) a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the fabricating method for graphene-metal bonding structure. Substrate (701) Graphene layer (710,730')