▎ 摘　　要

NOVELTY - Graphene is grown by chemical-vapor-deposition method on copper foil, and substrate is temporary bonded on graphene. The copper foil is etched in a liquid. The etched copper foil is washed and dried, to obtain temporary substrate/graphene layer sample. The graphene surface is doped with a doping solution, washed and dried, to obtain graphene sample having surface containing dopant. The graphene sample is provided with another temporary substrate/graphene layer sample, and the temporary substrate is removed, to form reagent molecules wrapped between coated substrate and graphene. USE - Doping of stabilized graphene thin film (claimed). ADVANTAGE - The method enables doping of stabilized graphene thin film having excellent electroconductivity and transparency. DETAILED DESCRIPTION - Reagent molecules are wrapped between coated substrate and graphene and/or between graphene and doping agent molecules. The graphene is grown by chemical-vapor-deposition method on copper foil, and substrate is temporary bonded on graphene. The copper foil is etched in a liquid. The etched copper foil is washed and dried, to obtain temporary substrate/graphene layer sample. The temporary substrate of temporary substrate/graphene layer sample is removed, and the graphene surface is doped with a doping solution, washed and dried, to obtain graphene sample having surface containing dopant. The graphene sample is provided with another temporary substrate/graphene layer sample, and the temporary substrate is removed, to form reagent molecules wrapped between coated substrate and graphene. The wrapping of reagent molecules between graphene and doping agent molecules is formed by growing graphene by chemical-vapor-deposition method on copper foil to obtain graphene/copper foil sample, doping surface of graphene to form doped sample, bonding doped samples to substrate and etching copper foil with etching solution, to obtain graphene sample having surface containing dopant.