▎ 摘　　要

NOVELTY - The method comprises forming a silicon-carbide film (103) on a free surface of a silicon layer (101) and gradually heating a substrate (100) until silicon of a first row of atoms of the silicon-carbide film is sublimated to form a graphene layer (105) on the silicon-carbide film, where the free surface of the silicon layer is stepped. The free surface comprises steps (102) separated by risers, which have virtually identical heights, where the steps have virtually identical threads. The risers extend approximately perpendicular to two adjacent steps. USE - The method is useful for forming a graphene layer on a surface of a substrate (claimed) such as a silicon substrate. ADVANTAGE - The method eliminates cracks in the graphene layer thus obtaining the graphene layer with better quality in a simple and cost-effective manner. DETAILED DESCRIPTION - The method comprises forming a silicon-carbide film (103) on a free surface of a silicon layer (101) and gradually heating a substrate (100) until silicon of a first row of atoms of the silicon-carbide film is sublimated to form a graphene layer (105) on the silicon-carbide film, where the free surface of the silicon layer is stepped. The free surface comprises steps (102) separated by risers, which have virtually identical heights (2-3 Angstrom ), where the steps have virtually identical threads with a height of 35-40 Angstrom . The risers extend approximately perpendicular to two adjacent steps. Each step extends approximately parallel to a support on which the substrate rests. The heating step is carried out under a controlled flow of inert gas. The method further comprises preheating the substrate under the controlled inert gas flow before the heating step until the sublimation of the first row of atoms of silicon carbide film. DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a method for forming a graphene layer. Substrate (100) Silicon layer (101) Steps (102) Silicon-carbide film (103) Graphene layer. (105)