▎ 摘　　要

NOVELTY - The device has two metal electrodes manufactured at ends of two sides of a U-shaped trench structure and used as source electrodes. A contact electrode is used as a drain electrode, and a substrate is used as a gate. An insulating layer is formed between the source electrodes and the gate and between the drain electrode and the gate. Ends of a graphene tape are fixed at the two source electrodes, respectively. The graphene tape is suspended over the drain electrode and connected or disconnected with the drain electrode when the graphene tape is deformed. USE - Switching device for a graphene nanometer electromechanical system. ADVANTAGE - The device can be minimized so as to create conditions to integrate with other device with higher degree. DETAILED DESCRIPTION - The insulating layer is made of a high-k oxide film, where the high-k oxide film is made of aluminum oxide, hafnium oxide or zirconium oxide. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a switching device.'(Drawing includes non-English language text)'