• 专利标题:   Quantum dot light emitting device, has hole-transport layer formed on quantum dot light-emitting layer, and graphene layer made of multiple graphene sheets, where quantum dot is formed within multiple nano holes.
  • 专利号:   KR2012029173-A, KR1689663-B1
  • 发明人:   CHA N G, HWANG S W, CHUNG H J, SONE C S
  • 专利权人:   SAMSUNG LED CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   H01L033/26, H01L051/52, H01L051/54
  • 专利详细信息:   KR2012029173-A 26 Mar 2012 H01L-051/52 201230 Pages: 10
  • 申请详细信息:   KR2012029173-A KR091104 16 Sep 2010
  • 优先权号:   KR091104

▎ 摘  要

NOVELTY - The device has a quantum dot light-emitting layer provided with a graphene layer. A quantum dot is formed within multiple nano holes. A hole-transport layer is formed on the quantum dot light-emitting layer. The graphene layer is made of multiple graphene sheets. An electron-transport layer is provided with metal oxide, silicon nitride, titanium dioxide, zirconium dioxide and hafnium oxide. USE - Quantum dot light emitting device. ADVANTAGE - The device increases quantum efficiency, controls surface density of the quantum dot and improves light efficiency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a quantum dot light emitting device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a quantum dot light emitting device.