▎ 摘　　要

NOVELTY - The method involves providing a layer of graphene formed over a portion of a surface of a dielectric substrate (102). An electrode (104) contacting edges of a periphery of the layer of the graphene formed over the portion of the surface of the dielectric substrate is formed. A dielectric layer is formed over the layer of the graphene and a part of the electrode contacting the graphene layer, where the dielectric layer and the graphene layer provide capacitor dielectric and the graphene layer contributes a quantum capacitance component to the dielectric layer. An upper electrode is formed on the dielectric layer. USE - Method for fabricating a quantum capacitance graphene plate varactor. ADVANTAGE - The method enables providing easy plate varactor fabricating process flow with higher tunability and better performance than. The method enables forming the electrode over edges or periphery of the graphene layer with sufficient coverage area to provide adequate resistance when a varactor fabrication is completed. The method enables providing plate varactors compatible with graphene process technology, so that quantum capacitance effects of graphene material are achieved to adjust capacitance of the varactor. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of an embedded electrode formed in a dielectric substrate. Dielectric substrate (102) Electrode (104)