• 专利标题:   Method for rapidly growing double-layer graphene single crystal, by adding catalyst and polished copper foil into two quartz boats, annealing the copper foil in a vacuum atmosphere, passing hydrogen and carbon dioxide into quartz tube, and removing the copper foil from the center of tube furnace.
  • 专利号:   CN115726033-A
  • 发明人:   TANG C, GONG P, SUN Z
  • 专利权人:   UNIV FUDAN
  • 国际专利分类:   C30B025/02, C30B025/18, C30B029/02, C30B033/00
  • 专利详细信息:   CN115726033-A 03 Mar 2023 C30B-029/02 202322 Chinese
  • 申请详细信息:   CN115726033-A CN11011430 31 Aug 2021
  • 优先权号:   CN11011430

▎ 摘  要

NOVELTY - The method comprises (1) adding catalyst and polished copper foil into two quartz boats, placing them in the quartz tube, placing catalyst in the center of heating jacket and the copper foil in the center of the tube furnace, and heating, (2) annealing copper foil in a vacuum atmosphere, (3) using carbon dioxide as the carbon source and hydrogen as reducing gas, passing hydrogen and carbon dioxide into the quartz tube, reacting carbon dioxide and hydrogen under the action of catalyst to generate methane, carbon monoxide and water, using methane as a direct carbon source, and growing double-layer graphene on the copper foil in oxygen-containing etching component single crystal, (4) removing the copper foil from the center of tube furnace, introducing hydrogen gas and rapidly lowering temperature in an atmosphere of a set pressure, and (5) taking out copper foil cooled to room temperature, and transferring double-layer graphene single crystal on the copper foil to a silicon wafer. USE - Method for rapidly growing double-layer graphene single crystal. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of a method for for rapidly growing double-layer graphene single crystal (Drawing includes non-English language text).