▎ 摘　　要

NOVELTY - The method involves loading a catalytic metal into a chemical vapor deposition system, increasing an internal temperature of the chemical vapor deposition system to conduct a heat treatment of the catalytic metal, and injecting a nitrogen compound into the chemical vapor deposition system. The injection of a nitrogen compound is made by generating the nitrogen compound using a bubbler, and injecting the nitrogen compound using an inert gas as a carrier gas. The first amount of first nitrogen compound and the amount of second nitrogen compound is controlled by a first amount of a first carrier gas injected and a second amount of a second carrier gas injected, respectively. The first amount of the first carrier gas injected is from 20-100% by volume of an amount of hydrogen gas injected. USE - Method for doping synthesized graphene by high temperature heat treatment in gas atmosphere containing dopant. ADVANTAGE - Enables to prepare high surface coverage and high quality graphene having a large area. Achieves an effect of synthesizing graphene having an improved surface coverage and a uniform single layer as well as preparing high quality graphene in a large area. DETAILED DESCRIPTION - The nitrogen-containing aromatic compound is one or more kinds selected from the group consisting of pyridine, pentachloropyridine, melamine, acrylonitrile, hexaphenylborazine, poly(4-vinylpyridine), 1,3,5-triazine, and piperidine. DESCRIPTION OF DRAWING(S) - The drawing shows the method for doping synthesized graphene by a high temperature heat treatment in a gas atmosphere containing a dopant.