▎ 摘　　要

NOVELTY - A semiconductor device comprises a channel element and a gate structure above the channel element. The channel element comprises a channel layer (A) and a channel layer (B) above the layer (A). The layer (A) comprises silicon, germanium, group III-V semiconductor or group II-VI semiconductor. The layer (B) contains a two-dimensional material. USE - Semiconductor device. ADVANTAGE - The device has excellent performance and is manufactured by an economical method. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for formation of the semiconductor device, which involves providing a workpiece comprising a semiconductor structure, depositing a two-dimensional material layer above the semiconductor structure, and forming the gate structure above the two-dimensional material layer. The semiconductor structure comprises silicon, germanium, group III-V semiconductor or group II-VI semiconductor. The two-dimensional material comprises graphene, tungsten sulfide, tungsten telluride, tungsten selenide, molybdenum sulfide, molybdenum telluride, black phosphorus or molybdenum selenide.