▎ 摘　　要

NOVELTY - The heterostructure has a layer of graphene, layer formed of tin disulfide and connected to a layer of hexagonal boron nitride partially sandwiched between the layer of graphene and a layer of tin sulfide. The layer of hexagonal boron nitride has thickness of 5-20 nanometer, and the layer of germanium is defined as multilayer graphene having thickness of 10-40 nanometer. The layers have thickness of about 5 nanometer to about 20 nanomter, respectively. Vander Waals are formed on silicon carbide/silicon substrate. The floating gate device comprises electrodes formed from palladium and gold. USE - Van der Waals heterostructure for use in a floating gate device (claimed) i.e. three-terminal floating gate device, used in an artificial neural network simulation. ADVANTAGE - The heterostructure achieves a high pattern recognition accuracy of 90% in an artificial neural network simulation such that highly asymmetric charge injection barriers can be created so as to facilitate efficient hole transport from tin disulfide across hexagonal boron nitride by lowering the hole-injection barrier. The heterostructure ensures large on/off current ratio, long retention time, and better endurance through hole trapping and detrapping processes, so that multilevel storage states are achieved under low program voltages without assistance of high-k dielectrics. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: a floating gate device; and an artificial neural network. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a Van der Waals heterostructure.