• 专利标题:   Graphene/silicon nitride/silicon composite material used as heat sink material, has silicon wafer, silicon-nitride insulation layer, and graphene layer containing graphene composite material containing carbon nanotube and graphite.
  • 专利号:   CN105514059-A
  • 发明人:   BAI S, FANG H, ZHANG Y
  • 专利权人:   UNIV PEKING, FANG H
  • 国际专利分类:   H01L023/36, H01L023/373, H05K007/20
  • 专利详细信息:   CN105514059-A 20 Apr 2016 H01L-023/36 201656 Pages: 6 English
  • 申请详细信息:   CN105514059-A CN10043077 23 Jan 2016
  • 优先权号:   CN10043077

▎ 摘  要

NOVELTY - A graphene/silicon nitride/silicon composite material consists of silicon wafer as base material, compact silicon-nitride insulation layer formed on silicon wafer, and graphene layer containing graphene composite material formed on silicon nitride insulation layer. The graphene composite material contains copper, aluminum, silicon carbide, copper tungstate, copper molybdate, carbon nanotube and graphite. USE - Graphene/silicon nitride/silicon composite material is used as heat sink material in heat-radiation apparatus (claimed). ADVANTAGE - The graphene/silicon nitride/silicon composite material has excellent heat-radiation effect. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of graphene/silicon nitride/silicon composite material.