▎ 摘　　要

NOVELTY - The polishing head has a polishing film whose working surface is formed with a conductive layer by using graphene or carbon nano-tube through chemical vapor deposition. A power supply unit is connected with the conductive layer through a contact point. A working surface of a polishing head base body is formed with a groove for holding the polishing film. The conductive layer and a wafer are sequentially arranged in the groove of the polishing head base body. A fixing ring is arranged on a working surface of the polishing head base body and sleeved on an outer peripheral surface of the wafer. USE - Polishing head for a chemical mechanical polishing device (claimed) for polishing of a wafer used in a semiconductor manufacturing field. ADVANTAGE - The conductive layer is formed between the polishing film and the wafer, and is connected with the power supply unit, so that etching amount of the metal is reduced compared with non-applied voltage, thus controlling contrast etching of the amount of metal and oxide, and hence reducing formation of depression and erosion, improving chemical mechanical wafer polishing uniformity, and yield of wafer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a chemical mechanical polishing device. DESCRIPTION OF DRAWING(S) - The drawing shows a structural schematic view of a polishing head for a chemical mechanical polishing device. Polishing head base body (2) Wafer (8) Power supply unit (12) Conductive layer (14) Contact (15)