• 专利标题:   Preparing phthalocyanine monocrystalline thin films on graphene substrate modified by copper film comprises e.g. cutting the copper-based graphene, annealing, heating, and naturally cooling, and loading graphene substrate.
  • 专利号:   CN107747130-A, CN107747130-B
  • 发明人:   DOU W
  • 专利权人:   UNIV SHAOXING
  • 国际专利分类:   C30B023/00, C30B029/54
  • 专利详细信息:   CN107747130-A 02 Mar 2018 C30B-029/54 201827 Pages: 8 Chinese
  • 申请详细信息:   CN107747130-A CN10996898 20 Oct 2017
  • 优先权号:   CN10996898

▎ 摘  要

NOVELTY - Preparing phthalocyanine monocrystalline thin films on graphene substrate modified by copper film comprises e.g. (i) cutting the copper-based graphene, (ii) placing the target substrate in a vacuum heating device, annealing, heating, and naturally cooling the target substrate to room temperature under vacuum, (iii) loading the graphene substrate into a vacuum chamber, and depositing copper film on the surface of graphene, and (iv) depositing graphene substrate with copper film, and loading, and depositing phthalocyanine single crystal thin film on the surface of the copper film. USE - The method is useful for preparing phthalocyanine monocrystalline thin films on graphene substrate modified by copper film. ADVANTAGE - The method achieves mono crystal structure. DETAILED DESCRIPTION - Preparing phthalocyanine monocrystalline thin films on graphene substrate modified by copper film comprises (i) cutting the copper-based graphene into the needed size, using polymethyl methacrylate assisted chemical etching method for transferring the graphene on the copper-based graphene to the target substrate, (ii) placing the target substrate in a vacuum heating device for annealing at high temperature, heating the target substrate at 500 degrees C, maintaining at 500 degrees C for 1 hour, and naturally cooling the target substrate to room temperature under vacuum to obtain clean graphene substrate, (iii) loading the graphene substrate into a vacuum chamber, preparing copper films by thermal deposition, and depositing copper film on the surface of graphene, (iv) depositing graphene substrate with copper film, and loading into a vacuum chamber, preparing phthalocyanine single crystal thin film by thermal deposition, and depositing phthalocyanine single crystal thin film on the surface of the copper film.