▎ 摘　　要

NOVELTY - A gallium arsenide/indium-gallium nitride two-junction solar cell based on Van der Waals force combination consists of gold top electrode, silicon-doped gallium arsenide epitaxial layer, graphene layer (G1), gold nanoparticle layer, graphene layers (G2), indium-gallium nitride nanopillar array layer, graphene layer (G3) and alumina anti-reflection layer. The area of the alumina anti-reflection layer is smaller than the area of the graphene layer (G3). The gold top electrode is provided on the periphery of the alumina anti-reflection layer and is in contact with the graphene layer (G3). USE - Two-junction solar cell. ADVANTAGE - The solar cell contains gold nanoparticle layer/graphene composite surface generating plasmon effect as the sub-junction binding structure, improves the overall light utilization rate, realizes the highly conductive sub-junction interface, and improves the conversion efficiency of gallium arsenide solar cells. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of gallium arsenide/indium-gallium nitride two-junction solar cell.