▎ 摘　　要

NOVELTY - Preparing semiconductor substrate (10) comprising two major parallel surfaces and circumferential edge, involving: forming metal film (30) on front surface of semiconductor substrate, where the metal film comprises front and back metal film surfaces, and bulk metal region; contacting the front metal film surface with a carbon-containing gas in a reducing atmosphere at a temperature to in-diffuse carbon atoms into the bulk metal region of the metal film; and precipitating carbon atoms to form a layer of graphene (20) between front substrate surface and back metal film surface. USE - For preparing semiconductor substrate (claimed). ADVANTAGE - The method produces graphene and other atomically thick sheets directly on a semiconductor substrate; enables preparation of graphene layers having desired patterns, on the major surface of the semiconductor substrate. DETAILED DESCRIPTION - A method for preparing a semiconductor substrate (10) comprising two major, generally parallel surfaces, one of which is a front surface of the semiconductor substrate and the other of which is a back surface of the semiconductor substrate, and a circumferential edge joining the front and back semiconductor substrate surfaces, involving: forming a metal film (30) on the front surface of the semiconductor substrate, where the metal film comprises a front metal film surface, a back metal film surface, and a bulk metal region between the front and back metal film surfaces, where the back metal film surface is in contact with the front semiconductor substrate surface; contacting the front metal film surface with a carbon-containing gas in a reducing atmosphere at a temperature sufficient to in-diffuse carbon atoms into the bulk metal region of the metal film; and precipitating carbon atoms to form a layer of graphene (20) between the front semiconductor substrate surface and the back metal film surface; and where the front surface layer of the semiconductor substrate comprises a layer comprising a carbon-rich polymer. An INDEPENDENT CLAIM is included for a multilayer article comprising: a semiconductor wafer comprising two major, generally parallel surfaces, one of which is a front surface of the semiconductor wafer and the other of which is a back surface of the semiconductor wafer, a circumferential edge joining the front and back surfaces, and a central plane between the front and back surfaces; a layer of graphene in contact with the front surface of the semiconductor wafer; and a metal film in contact with the layer of graphene, where the metal film comprises a front metal film surface, a back metal film surface, and a bulk metal region between the front and back metal film surfaces, and further where the metal film comprises metal selected from nickel, copper, iron, platinum, palladium, ruthenium, cobalt, and their alloys. DESCRIPTION OF DRAWING(S) - The figure shows a depiction of a structure comprising a semiconductor substrate. Semiconductor substrate (10) Layer of graphene (20) Metal film (30)