▎ 摘　　要

NOVELTY - The detector has a crystal silicon substrate arranged with a silicon dioxide dielectric layer and a silicon nitride waveguide layer. A surface of a silicon dioxide medium layer is formed with a silicon nitride waveguide layer. A continuous molybdenum disulfide layer is paved on an upper part of the silicon nitride waveguide layer. Two sides of the silicon nitride waveguide layer are contact with a continuous graphene layer, where thickness of the continuous graphene layer is 0.5nm to 2nm. A metal electrode is made of a titanium and gold material. USE - Silicon based waveguide visible light wave band graphene integrated photovoltaic detector. ADVANTAGE - The detector realizes response reach to high 32A/W degrees. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a silicon based waveguide visible light wave band graphene integrated photovoltaic detector.