• 专利标题:   Semiconductor structure comprises substrate, multiple fins, formed on substrate, multiple isolation structures, each formed on top surface of substrate between adjacent fins and power rail, formed in one isolation structure of multiple isolation structures and further in substrate.
  • 专利号:   US2023154848-A1
  • 发明人:   LIU P, ZHANG H
  • 专利权人:   SEMICONDUCTOR MFG INT BEIJING CORP, SEMICONDUCTOR MFG INT SHANGHAI CORP
  • 国际专利分类:   H01L023/528, H01L023/532
  • 专利详细信息:   US2023154848-A1 18 May 2023 H01L-023/528 202343 English
  • 申请详细信息:   US2023154848-A1 US093497 05 Jan 2023
  • 优先权号:   CN11012609

▎ 摘  要

NOVELTY - Semiconductor structure comprises substrate (100), multiple fins (110), formed on the substrate, a multiple isolation structures, each formed on a top surface of the substrate between adjacent fins and a power rail, formed in one isolation structure of the multiple isolation structures and further in the substrate. The top surface of the power rail is lower than a top surface of the multiple fins. USE - Semiconductor structure. ADVANTAGE - The semiconductor structure enables power rail and the active layer of the standard cell in a same layer, which releases the space occupied by the wiring traces in the metal layer. When a same response speed of the semiconductor structure is satisfied, reduces dimension of the standard cell, which is beneficial for the advancement to the next process node of the semiconductor technology, or under a same dimension of the standard cell, more space available for the wiring traces, to improve the performance of the semiconductor structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of semiconductor structure. 100Substrate 110Fins 200Isolation structure layer 300Patterned photoresist layer