• 专利标题:   Preparing vertical graphene/boron doped diamond sensing electrode used for detection of biological molecules, involves using electronic assisted hot filament chemical vapor deposition device for preparing boron-doped diamond film.
  • 专利号:   CN107119263-A
  • 发明人:   LI M, LI X, LI H, LI C, SUN D, YANG B
  • 专利权人:   UNIV TIANJIN TECHNOLOGY
  • 国际专利分类:   C23C016/02, C23C016/26, C23C016/27, G01N027/327
  • 专利详细信息:   CN107119263-A 01 Sep 2017 C23C-016/27 201774 Pages: 7 Chinese
  • 申请详细信息:   CN107119263-A CN10307234 04 May 2017
  • 优先权号:   CN10307234

▎ 摘  要

NOVELTY - Preparing vertical graphene/boron doped diamond sensing electrode involves using electronic assisted hot filament chemical vapor deposition device for preparing boron-doped diamond film. The plasma jet chemical vapor deposition is adopted. The tantalum or platinum sheet as substrate is selected. The surface is polished by using abrasive paper. The impurity on the surface is removed and ground after processing it with ultrapure water and absolute ethyl alcohol ultrasonically for 6-10 minutes. The cleaned substrate is kept in a suspension of diamond micro powder. USE - Method for preparing vertical graphene/boron doped diamond sensing electrode used for detection of biological molecules (claimed). DETAILED DESCRIPTION - Preparing vertical graphene/boron doped diamond sensing electrode involves using electronic assisted hot filament chemical vapor deposition device for preparing boron-doped diamond film. The plasma jet chemical vapor deposition is adopted. The tantalum or platinum sheet as substrate is selected. The surface is polished by using abrasive paper. The impurity on the surface is removed and ground after processing it with ultrapure water and absolute ethyl alcohol ultrasonically for 6-10 minutes. The cleaned substrate is kept in a suspension of diamond micro powder. The obtained product is ultrasonically grinding for 40min- 60min, making the substrate surface fully nucleated. The nitrogen is blown on the substrate. The device for preparing boron-doped diamond film is opened. The electronic auxiliary hot wire chemical vapor deposition device is closed through a mechanical method to obtain the boron-doped diamond film. The boron doped diamond surface is uniformly covered with a layer of gold film as catalyst. The boron-doped diamond thin film catalyst is placed on the sample table in the direct current plasma jet chemical vapor deposition device in the chamber. The device is opened. The graphene on boron-doped diamond thin film is bonded catalyst surface. The device is closed obtaining vertical graphene/diamond compound film mixed with boron. The needed size is cut as the sensing electrode.