▎ 摘　　要

NOVELTY - Substrate having graphene film comprises patterned aluminum oxide film (103) formed on base substrate (100), and graphene film having graphene atomic layers grown on aluminum oxide film. The graphene film growing parallel to surface of aluminum oxide film, where graphene film has electrical conductivity of greater than or equal to 1x 104 S/cm measured by four-probe resistive method using inter-voltage-probe distance of 0.2 mm, where base substrate is single crystalline silicon substrate (101) having silicon oxide film (102). USE - As substrate having graphene film used in e.g. electronic-photonic integrated circuits e.g. channel of field effect transistors, optical emitting/receiving devices and wiring lines formed in the graphene film (claimed). ADVANTAGE - The substrate having graphene film does not require any ultrahigh vacuum process or any special manufacturing equipment, and the manufacturing equipment cost can be suppressed. In addition, the graphene film can be grown at relatively low temperatures, thus, can be manufactured at very low cost. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for fabrication method for a substrate having graphene film, involving substrate preparation step including: using, as a base substrate, a single crystalline silicon substrate having silicon oxide film formed on it; and forming, on at least one main surface of the base substrate, an aluminum oxide film; circuit patterning step of forming a desired circuit pattern in the aluminum oxide film; and a graphene film formation step of preferentially growing a graphene film only on the circuit pattern by a chemical vapor deposition method using a carbon compound as a precursor. DESCRIPTION OF DRAWING(S) - The figure shows cross-sectional view of fabricating step for fabricating graphene film on substrate. Base substrate (100) Single crystalline silicon substrate (101) Silicon oxide film (102) Region of aluminum oxide film (104) Circuit wiring (106)