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  • 专利标题:   Heterogeneous layered structure useful in electronic device, and transistor, comprises hexagonal boron nitride sheet, and graphene sheet on hexagonal boron nitride sheet.
  • 专利号:   US2014264282-A1, KR2014114199-A, KR2015130256-A, US9515143-B2
  • 发明人:   LEE S, SONG Y, WANG M, JANG S, CHOI J, CHOI J Y, JANG S K, LEE S J, SONG Y J
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, UNIV SUNGKYUNKWAN RES BUSINESS FOUND
  • 国际专利分类:   H01L021/02, H01L029/16, H01L021/336, H01L029/78, H01L029/267, H01L029/778, H01L029/12
  • 专利详细信息:   US2014264282-A1 18 Sep 2014 H01L-029/16 201469 Pages: 24 English
  • 申请详细信息:   US2014264282-A1 US211327 14 Mar 2014
  • 优先权号:   KR028757, KR153256

▎ 摘　　要

NOVELTY - Heterogeneous layered structure comprises hexagonal boron nitride sheet, and graphene sheet on the hexagonal boron nitride sheet, where the heterogeneous layered structure leads to Dirac point shift of about 0-10 V in plot of resistance (R) versus gate voltage (Vg) in an electronic device. USE - The heterogeneous layered structure is useful in electronic device, and transistor (all claimed). ADVANTAGE - The heterogeneous layered structure has excellent transparency, and conductivity. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) electronic device; (2) transistor; and (3) method of manufacturing the heterogeneous layered structure.