• 专利标题:   Method for preparing high-conductivity nanometer graphene colloid useful in field of printed circuit board involves mixing nano-graphene material with additive, dissolving in water, and performing ball milling and ultrasonic dispersion treatment.
  • 专利号:   CN116022776-A
  • 发明人:   ZHAO Y, CHAI X, HU C, YANG G
  • 专利权人:   YANGZHOU ELEC ELTEK ELECTRONICS CO LTD, UNIV XIAN JIAOTONG
  • 国际专利分类:   C01B032/184, C01B032/194, C25D003/38, H05K003/42
  • 专利详细信息:   CN116022776-A 28 Apr 2023 C01B-032/184 202345 Chinese
  • 申请详细信息:   CN116022776-A CN11659228 22 Dec 2022
  • 优先权号:   CN11659228

▎ 摘  要

NOVELTY - The method involves forming the graphitized structure under argon gas, high temperature conditions, and catalytic action by carbon source precursor. The graphitized structural material oxidized to form nanometre oxidized graphite. The nano-graphene material is formed by annealing the nano-graphite oxide. The conductivity is improved by further high temperature treatment. The nano-graphene material is mixed with the additive and dissolving in water. The ball milling and ultrasonic dispersion treatment is performed. USE - Method for preparing high-conductivity nanometer graphene colloid useful in the field of printed circuit board. ADVANTAGE - The method: enables to prepare high-conductivity nanometer graphene colloid that has outstanding performance, good conductivity, long service life; and can replace other carbon-based hole metallization colloid or solution applied on the printed circuit board. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an application of the high-conductivity nanometer graphene colloid.