• 专利标题:   Preparation of self-assembly growth micro-nano-scale graphene used as electrode by carrying out electron beam evaporation of transition metal film on substrate, forming transition metal particles and carrying out chemical vapor deposition.
  • 专利号:   CN103014845-A, CN103014845-B
  • 发明人:   WANG D, ZHANG J, CHAI Z, HAO Y, HAN D, YAN Y, NING J
  • 专利权人:   UNIV XIDIAN
  • 国际专利分类:   C01B031/02, C30B025/00, C30B029/02
  • 专利详细信息:   CN103014845-A 03 Apr 2013 C30B-025/00 201369 Pages: 9 Chinese
  • 申请详细信息:   CN103014845-A CN10591644 31 Dec 2012
  • 优先权号:   CN10591644

▎ 摘  要

NOVELTY - Preparation of self-assembly growth micro-nano-scale graphene comprises carrying out electron beam evaporation of transition metal film on substrate, controlling thickness by controlling transition metal flow, temperature, pressure and time, forming transition metal particles using surface tension of metal thin film, distributing on substrate, and carrying out chemical vapor deposition on array. USE - Method for preparing self-assembly growth micro-nano-scale graphene used as secondary cover of seed crystal and graphene device electrode (claimed).