▎ 摘　　要

NOVELTY - The transistor has an insulating layer (11), a conductive channel (12) and a source electrode (13), where the insulating layer is formed on a semiconductor substrate (10) and the conductive channel. The source electrode and a drain electrode (14) are arranged on the conductive channel. A gate dielectric layer (15) is formed on the source electrode, and the conductive channel is made of graphite material. A gate electrode (17) is located on the gate dielectric layer, which is provided with a graphene oxide medium layer and a metal oxide dielectric layer (16). USE - Graphene field effect transistor. ADVANTAGE - The transistor has better performance, and solves the problem of atomic layer deposition process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing a graphene field effect transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene field effect transistor. Semiconductor substrate (10) Insulating layer (11) Conductive channel (12) Source electrode (13) Drain electrode (14) Gate dielectric layer (15) Metal oxide dielectric layer (16) Gate electrode (17)