▎ 摘　　要

NOVELTY - Preparation of single-crystal graphene comprises taking metal foil, covering lower and upper surfaces with semiconductor layer to obtain laminated structure, placing in air evacuated enclosed container, adding less than or equal to 200 sccm hydrogen and less than or equal to 1000 sccm argon, heating until metal foil is molten state, annealing continuously for 1 hour, performing graphene crystal growth with less than or equal to 200 sccm methane and hydrogen for 5-30 minutes and cooling to room temperature for 10 minutes. USE - Method for preparing single-crystal graphene. ADVANTAGE - The method is easier with reduced vacuum degree requirements and degree of control of methane content.