• 专利标题:   Semiconductor chip of three-dimensional stacked chip package, has graphene film that is formed at boundary of coaxial penetration silicone via and passive device that is supplied with ground voltage through secondary via.
  • 专利号:   KR2013085148-A
  • 发明人:   HO K J, YEONG K G
  • 专利权人:   KOREA ADVANCED INST SCI TECHNOLOGY
  • 国际专利分类:   H01L023/48
  • 专利详细信息:   KR2013085148-A 29 Jul 2013 H01L-023/48 201356 Pages: 11
  • 申请详细信息:   KR2013085148-A KR006092 19 Jan 2012
  • 优先权号:   KR006092

▎ 摘  要

NOVELTY - The semiconductor chip has graphene film (124) that is formed at the boundary of coaxial penetration silicone via (120). The secondary via (122) transfers ground voltage to passive device and primary via (121) delivers signal or power supply voltage. The primary via is surrounded around the coaxial penetration silicone via. An active layer (130) is formed in one side of the substrate (110). USE - Semiconductor chip of three-dimensional stacked chip package (claimed) used in notebook computer, personal digital assistant, and mobile telephone. ADVANTAGE - Since the graphene film is formed between the secondary via delivering the insulation portion and ground voltage, the structural stability and electrical performance of the coaxial penetration silicone via can be enhanced. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the semiconductor chip. Substrate (110) Coaxial penetration silicone via (120) Primary via (121) Secondary via (122) Graphene film (124) Active layer (130)