• 专利标题:   Graphene film used for manufacture of composite for transistor, has wrinkle density of less than preset value.
  • 专利号:   JP2017043538-A
  • 发明人:   AOTA N, AIDA H
  • 专利权人:   NAMIKI SEIMITSU HOSEKI KK
  • 国际专利分类:   C01B032/15, C01B032/18, C01B032/182, C23C016/01, C23C016/26, C30B029/02, H01L021/205
  • 专利详细信息:   JP2017043538-A 02 Mar 2017 C01B-032/15 201719 Pages: 7 Japanese
  • 申请详细信息:   JP2017043538-A JP161722 22 Aug 2016
  • 优先权号:   JP166437

▎ 摘  要

NOVELTY - A graphene film has wrinkle density of 0.004 per mu m2 or less. USE - Graphene film used for manufacture of composite (all claimed) for transistor. ADVANTAGE - The graphene film has reduced wrinkle density by having reduced stress which arises according to the thermal expansion coefficient difference of substrate and graphene film. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) composite, which has a substrate of 0.1 mm or more thickness, and the graphene film formed on the substrate; (2) manufacture of composite, which involves forming the graphene film on a substrate; and (3) manufacture of graphene film, which involves peeling from the composite.