▎ 摘　　要

NOVELTY - The device has a first medium layer (11) that is located a substrate (10) and a second medium layer (12) that is formed on the first medium layer. A phase change material layer is located on the second medium layer and an upper electrode (13). A phase change thin film layer of the phase change material layer is arranged for contacting with a graphene layer. The graphene layer is located in middle of the phase change thin film layer and upper electrode contact, so that the phase change thin film layer is divided into upper and lower layers. USE - Phase change storage device with graphene layer. ADVANTAGE - The lower electrode interface is added to graphene which can effectively inhibit the reversible operation process. The diffusion of elements between the middle and lower electrodes and the phase change layer can improve the phase change film thus providing component stability and extending the lifetime of the phase change storage device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparation of phase change storage device with a graphene layer. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic diagram of a phase change storage device. Substrate (10) First medium layer (11) Second medium layer (12) Upper electrode (13)