▎ 摘　　要

NOVELTY - The method involves forming a substrate (100) made of germanium and silicon germanium. A graphene layer (110) is formed on the substrate including the semiconductor catalyst. A thin film (120,130) is formed on the graphene layer. A lamination structure of the graphene layer is separated from the substrate. The thin film is the inorganic film. USE - Method of transferring graphene. ADVANTAGE - The graphene can be easily transferred while contamination and damage of the graphene are prevented. The graphene transcription process can be simplified. The graphene device can be manufactured efficiently with excellent performance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method of manufacturing graphene application device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of graphene transfer method. (Drawing includes non-English language text) Substrate (100) Graphene layer (110) Thin film (120,130) Organic layer (140)