▎ 摘　　要

NOVELTY - Forming a graphene product including a nanocrystalline graphene by a plasma enhanced chemical vapor deposition process, involves growing the nanocrystalline graphene directly on a substrate using a plasma of a reaction gas at less than or equal to 700degreesC, where the nanocrystalline graphene includes nano-sized crystals and having a ratio of carbon having an sp2 bonding structure to total carbon of 50-99%, and the reaction gas includes a carbon source and an inert gas. USE - Method for forming a graphene product including nanocrystalline graphene. ADVANTAGE - The method enables growing nanocrystalline graphene directly on a substrate via plasma enhanced chemical vapor deposition method without using a catalyst. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a device, which comprises a plasma enhanced chemical vapor deposition machine configured to perform the method. DESCRIPTION OF DRAWING(S) - The drawing shows cross-sectional view of device structures including barrier layer. Electronic device (900b) Understructure (901) Insulating layer (921) Contact structure (941) Element layer (991)