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  • 专利标题:   Manufacture of photoresist-graphene composite material for e.g. micro-sensor, involves exposing mixture comprising graphene material and photoresist using mask pattern, and treating with developing solution to remove uncrosslinked portions.
  • 专利号:   CN107367905-A, CN107367905-B
  • 发明人:   ZOU Y, XUE B
  • 专利权人:   UNIV BEIJING NORMAL, UNIV BEIJING NORMAL
  • 国际专利分类:   C01B032/182, G03F007/20, G03F007/40, G03F007/42
  • 专利详细信息:   CN107367905-A 21 Nov 2017 G03F-007/20 201803 Pages: 18 Chinese
  • 申请详细信息:   CN107367905-A CN10576149 14 Jul 2017
  • 优先权号:   CN10576149

▎ 摘　　要

NOVELTY - Manufacture of photoresist-graphene composite material involves exposing a mixture comprising a graphene material and a photoresist using a mask pattern, and treating the exposed material with a developing solution to remove uncrosslinked portions to obtain a composite photoresist-graphene material. The graphene material is graphene and/or graphene oxide. USE - Manufacture of photoresist-graphene composite material for catalyst support, surface adsorbent material and micro-sensor (all claimed). ADVANTAGE - The photoresist-graphene composite material having high specific surface area is prepared by simple method.