▎ 摘　　要

NOVELTY - The method involves providing a fin-type structure to form an initial graphene layer. A patterned metal layer is formed on an initial graphene layer. The patterned metal layer is formed in a groove under the initial graphene layer. The initial graphene layer is converted into a dual-layer graphene structure. A hydrogenation treatment process is carried out by the dual-layer graphene structure to generate an energy bandgap on the dual-layer graphene structure. A grid dielectric layer is formed on the dual-layer graphene structure. A graphene film layer is placed on a copper layer. USE - Method for manufacturing a semiconductor structure. ADVANTAGE - The method enables forming a dual-layer graphene band gap on a semiconductor structure so as to increase electron mobility of the semiconductor structure, thus improving cut-off voltage stability and production quality in an effective manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a semiconductor structure. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for manufacturing a semiconductor structure. `(Drawing includes non-English language text)`