▎ 摘　　要

NOVELTY - Preparation method of large domain graphene single crystal,involves(1) annealing the sapphire/metal substrate with an oxygen-containing gas; (2) providing growth gas according to a mode of increasing the proportion gradient of the growth gas, and growing on the sapphire/metal substrate to obtain graphene single crystal in the large domain area. USE - Preparation method of large domain graphene single crystal. ADVANTAGE - The quality of graphene film is greatly improved, obtained graphene is in monocrystalline form, size of a monocrystalline domain of the obtained graphene is large, and size of the domain is several times that of the graphene monocrystalline obtained by a conventional method.