▎ 摘　　要

NOVELTY - The method involves forming a dielectric layer on a surface of a substrate. The dielectric layer is patterned to form an opening. A top surface of the dielectric layer is covered with a first metal layer and a second metal layer. A first graphene layer is formed on a top surface of the second metal layer. A medium layer is formed on the first graphene layer. A second metal layer is formed on a top surface of a second graphene layer, where thickness of the first graphene layer is measured about 1-100 angstroms. The first metal layer is made of copper. USE - Method for forming a semiconductor structure. ADVANTAGE - The method enables reducing the resistance of the semiconductor structure and improving electrical performance of the semiconductor structure. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a semiconductor structure. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a semiconductor structure.