• 专利标题:   Semiconductor device comprises two-dimensional material layer between metal layer and semiconductor layer, and metal compound layer between two-dimensional material layer and semiconductor layer.
  • 专利号:   US2022246718-A1, KR2022109896-A
  • 发明人:   SHIN H, SHIN K, BYUN K, CHO Y, CHO Y C, BYUN K E, SHIN K W, SHIN H J
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   H01L023/522, H01L029/04, H01L029/16, H01L029/161, H01L029/49, H01L021/02, H01L029/45
  • 专利详细信息:   US2022246718-A1 04 Aug 2022 H01L-029/04 202268 English
  • 申请详细信息:   US2022246718-A1 US465213 02 Sep 2021
  • 优先权号:   KR013474

▎ 摘  要

NOVELTY - Semiconductor device comprises a metal layer, a semiconductor layer in electrical contact with the metal layer, a two-dimensional (2D) material layer between the metal layer and the semiconductor layer and having a 2D crystal structure, and a metal compound layer between the 2D material layer and the semiconductor layer. USE - Semiconductor device. ADVANTAGE - The semiconductor device inhibits or reduces the likelihood of a portion of a reaction source from reacting with a material of the semiconductor layer in the manufacturing process, and prevents or reduces or mitigates an increase in contact resistivity due to a semiconductor oxide film. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of the structure of a semiconductor device. Metal layer (110) Semiconductor layer (120) Two-directional metal layer (130) Metal compound layer (140)