▎ 摘　　要

NOVELTY - Polymer-based semiconductor fiber i.e. conjugated semiconductor polymer whose fiber surface and the interior has pore structure and orientation structure, is claimed. USE - Used as polymer-based semiconductor fiber i.e. conjugated semiconductor polymer. ADVANTAGE - The method significantly improves the transconductance of the device and conversion efficiency of converting the modulation of the gate voltage (VG) to the modulation of the drain current (ID) flowing through the entire channel. DETAILED DESCRIPTION - INDEPENDENT CLAIMS is also included for: (1) Preparing semiconductor fiber, comprising (i) configuring the conjugated semiconducting polymer into a spinning dope for wet spinning, where the solvent of spinning stock solution is methanesulfonic acid, N,N-dimethylformamide, N-methylpyrrolidone, o-dichlorobenzene, toluene, dimethylbenzene, chloroform or chlorobenzene; and (ii) wet spinning with the spinning dope, extruding the spinning thin stream through the spinneret first, entering the first coagulation bath and the second coagulation bath in turn, drying, collecting the dried fibers, and annealing the collected fibers to obtain polymer-based semiconductor fibers, drafting during the process from the extrusion of the spinneret to the collection with drafting ratio of 1.5-5, where the spinneret is a stainless steel dispensing spinneret, including a hollow truncated needle base part and a needle tube part with a circular, triangular, polygonal or star-shaped cross-sectional shape, and the cross-sectional area is 0.01-0.1 mm2 and the length of the needle tube is 1-10 cm, the extrusion speed of the spinneret is 100-2000 mul/minute and the temperature of the first coagulation bath is higher than that of the second coagulation bath; and (2) Fiber organic electrochemical transistor device made from a polymer-based semiconductor fiber, comprising a polymer-based semiconducting fiber, a metal electrode layer on and in electrical contact with the polymer-based semiconducting fiber, and the metal electrode layer includes a metal source contact, a metal drain contact, and a gap therebetween.