• 专利标题:   Graphene heterostructure used for electronic components used in electronic circuits, and for electronic devices, consists of graphene layer positioned between two encapsulation layers.
  • 专利号:   WO2012127245-A2, WO2012127245-A3, US2014008611-A1, EP2689459-A2, CN103493204-A, KR2014027962-A, JP2014522321-W, JP6033278-B2, US9548364-B2, CN103493204-B, EP2689459-B1, KR1970809-B1
  • 发明人:   GEIM A K, NOVOSOLEV K S, GORBACHEV R V, PONOMARENKO L A, GEIM A, NOVOSELOV K, GORBACHEV R, PONOMARENKO L, NOVOSELOV K S
  • 专利权人:   UNIV MANCHESTER, UNIV MANCHESTER, UNIV MANCHESTER, UNIV MANCHESTER, GEIM A, NOVOSELOV K, GORBACHEV R, PONOMARENKO L
  • 国际专利分类:   H01L029/16, H01L021/02, B82B001/00, B82Y030/00, B82Y040/00, C01B031/02, H01L021/336, H01L029/06, H01L029/786, H01L051/05, H01L051/30, H01L051/40, B82B003/00
  • 专利详细信息:   WO2012127245-A2 27 Sep 2012 H01L-029/16 201266 Pages: 85 English
  • 申请详细信息:   WO2012127245-A2 WOGB050642 22 Mar 2012
  • 优先权号:   GB004824, KR727677

▎ 摘  要

NOVELTY - A graphene heterostructure consists of encapsulation layer (I), encapsulation layer (II), and a graphene layer positioned between the encapsulation layers. USE - Graphene heterostructure is used for electronic components used in electronic circuits, and for electronic devices (all claimed). The electronic component includes hall probes, FETs, transistors, photodetectors, variable capacitors, and radiofrequency transistors. The electronic device includes LCDs, touch screens, solar cells, strain gauges, and gas sensors. ADVANTAGE - The graphene heterostructure allows the formation of more complicated devices, including several layers of transistors for integrated circuits. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) manufacture of graphene heterostructure; (2) deposition of layer of material on surface using precursor structure; (3) precursor structure including layer or material positioned on carrier layer; (4) manufacture of precursor structure; and (5) intermediate structure.