• 专利标题:   Thermoelectric semiconductor material, comprises cobalt triantimonide compound and graphene oxide or graphene.
  • 专利号:   PL400760-A1
  • 发明人:   WRONA A, MAZUR J, CZEPELAK M, LIS M, TOMCZYK P
  • 专利权人:   INST METALI NIEZELAZNYCH
  • 国际专利分类:   C01G030/00, C01G051/00, H01L035/14, H01L035/18
  • 专利详细信息:   PL400760-A1 17 Mar 2014 C01G-030/00 201449 Pages: 1
  • 申请详细信息:   PL400760-A1 PL400760 13 Sep 2012
  • 优先权号:   PL400760

▎ 摘  要

NOVELTY - A thermoelectric semiconductor material comprises cobalt triantimonide compound and 0.01-2.5 wt.% graphene oxide or graphene. USE - Thermoelectric semiconductor material. DETAILED DESCRIPTION - A thermoelectric semiconductor material comprises cobalt triantimonide compound (RyMxCo1-xSb3), where M is chromium, manganese, iron, ruthenium, nickel, platinum, or copper, R is element of the lanthanide or actinide series, x and y are 0-1, and 0.01-2.5 wt.% graphene oxide or graphene.