▎ 摘　　要

NOVELTY - The method involves forming a catalyst metal layer in the upper side of substrate. The plasma conversion process is performed with the carbon material cathode of the magnetic field arc source. An amorphous carbon thin film is formed in top surface of catalyst metal layer. The formed amorphous carbon thin film is heat-treated. The thin film is cooled for forming graphene layer. The catalyst metal is selected from group consisting of nickel (Ni), iron (Fe), cobalt (Co), platinum (Pt), copper (Cu) and ruthenium (Ru). USE - Manufacturing method of graphene for transparency electrode plate used in semiconductor device (all claimed). ADVANTAGE - The graphene having excellent mechanical property and electrical characteristic can be manufactured with high productivity. The graphene with less deformity can be manufactured effectively. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the manufacturing process of graphene.