• 专利标题:   Perovskite/crystalline silicon tandem solar cell has transparent conductive oxide, hole transport layer, light-absorbing layer, electron transport layer, conductive oxide, anti-reflection layer and grid line arranged from bottom to top.
  • 专利号:   CN113035968-A
  • 发明人:   XU J, ZHANG W, SHI L
  • 专利权人:   HANGZHOU ZHONGNENG OPTOELECTRONIC CO LTD
  • 国际专利分类:   H01L031/0216, H01L031/0256, H01L031/028, H01L051/42
  • 专利详细信息:   CN113035968-A 25 Jun 2021 H01L-031/0216 202160 Pages: 7 Chinese
  • 申请详细信息:   CN113035968-A CN11354920 25 Dec 2019
  • 优先权号:   CN11354920

▎ 摘  要

NOVELTY - The solar cell has the grid lines (13) and the anti-reflection layers (12) which are arranged at bottom and top. The gate line, anti-reflection layer, a first transparent conductive oxide (1), p-type microcrystalline silicon or amorphous silicon (2), first tunneling compound (3) are arranged from bottom to top. A N or P-type monocrystalline silicon wafer (4), second tunneling compound (5), n-type microcrystalline silicon or amorphous silicon (6), second transparent conductive oxide (7), hole transport layer (10), perovskite light-absorbing layer (9), electron transport layer (8), third transparent conductive oxide (11), anti-reflection layer and grid line are arranged from bottom to top. USE - Perovskite/crystalline silicon tandem solar cell based on double tunneling compound for power generation. ADVANTAGE - The tunnel compound selective contact is directly formed on both sides of the N or P type single crystal silicon wafer. The solar cell has obvious passivation effect, simple process and low cost. The double-tunneling compound-based crystalline silicon bottom cell and perovskite top cell easily achieve better current matching, smoother interface charge transfer, and achieve high conversion efficiency and high stability at the same time. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the perovskite/crystalline silicon tandem solar cell. P-type microcrystalline silicon or amorphous silicon (2) First tunneling compound (3) N or P-type monocrystalline silicon wafer (4) Second tunneling compound (5) N-type microcrystalline silicon or amorphous silicon (6) Second transparent conductive oxide (7) Electron transport layer (8) Perovskite light-absorbing layer (9) Hole transport layer (10) Third transparent conductive oxide (11) Anti-reflection layer (12) Grid line (13)