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  • 专利标题:   Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.
  • 专利号:   WO2022163357-A1, JP2022114773-A
  • 发明人:   UEDA H, WADA M, ZHEN
  • 专利权人:   TOKYO ELECTRON LTD
  • 国际专利分类:   C01B032/186, C23C016/26, C23C016/511, C30B029/02, H01L021/205, H05H001/46
  • 专利详细信息:   WO2022163357-A1 04 Aug 2022 C23C-016/26 202269 Pages: 45 Japanese
  • 申请详细信息:   WO2022163357-A1 WOJP000820 13 Jan 2022
  • 优先权号:   JP011201

▎ 摘　　要

NOVELTY - Film formation method, involves (i) forming a metal film on a silicon-containing film of a substrate, (ii) forming a graphene film on the metal film, where the metal film is silicided by heating the metal film during at least one of step (i) and after step (i), and (iii) continuously performing the first film forming process and the second film forming process in the same chamber. USE - As film formation method. ADVANTAGE - The method reduces contact resistance between silicon-containing films and graphene films. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a film deposition apparatus.