▎ 摘　　要

NOVELTY - Preparing sulfur ion implanted nano diamond-graphene composite film involves mixing and dispersing diamond powder and glycerin uniformly to obtain diamond powder polishing paste. The single crystal silicon wafer is polished by using obtained diamond powder polishing paste, and then silicon wafer is washed and blown, dried to complete seeding process. The single crystal silicon wafer is placed into the hot wire chemical vapor deposition equipment, acetone is used as carbon source, and hydrogen bubbling is used to bring the acetone into the reaction chamber for film growth. The flow ratio of hydrogen and acetone is 200:90sccm, growth power is 2000-2400 watt, growth pressure is controlled from 1.0-2.6 kilopascal. The film growth time is 40-80 minutes, after growth is completed. The power is slowly reduced to 0 at rate of 0.5-3V/minute in hydrogen atmosphere to complete preparation of nano-diamond-graphene composite film. USE - Method for preparing sulfur ion implanted nano diamond-graphene composite film. ADVANTAGE - The method enables to prepare sulfur ion implanted nano diamond-graphene composite film that is very conducive to the application in the field of high-precision trace detection, has excellent electrochemical activity, low background current, wide potential window. DETAILED DESCRIPTION - Preparing sulfur ion implanted nano diamond-graphene composite film involves mixing and dispersing diamond powder and glycerin uniformly to obtain diamond powder polishing paste. The single crystal silicon wafer is polished by using obtained diamond powder polishing paste, and then silicon wafer is washed and blown, dried to complete seeding process. The single crystal silicon wafer is placed into the hot wire chemical vapor deposition equipment, acetone is used as carbon source, and hydrogen bubbling is used to bring the acetone into the reaction chamber for film growth. The flow ratio of hydrogen and acetone is 200:90sccm, growth power is 2000-2400 watt, growth pressure is controlled from 1.0-2.6 kilopascal. The film growth time is 40-80 minutes, after growth is completed. The power is slowly reduced to 0 at rate of 0.5-3V/minute in hydrogen atmosphere to complete preparation of nano-diamond-graphene composite film. The sulfur ion implantation is performed on the nano-diamond-graphene composite film. The implantation dose is 1012cm-2, and implantation energy is 55 kiloelectron volt. The film after sulfur ion implantation is then subjected to vacuum annealing at 800-1000 degrees C for 20-30 minutes to produce final product.