▎ 摘　　要

NOVELTY - A visible-near infrared wide spectrum photoelectric detector comprises a flexible substrate, a transparent conductive electrode, an n-type indium phosphide etch stop layer, an active layer, p-type indium phosphide layer, a p-type ohmic contact layer, an upper electrode layer, and a silicon nitride passivation layer covering the p-type ohmic contact layer and the partial upper electrode layer. The visible-near infrared wide spectrum photoelectric detector is an independent device and/or integrated in the circuit. The material of active layer is indium-gallium-arsenic or indium-gallium-arsenic-phosphorus, preferably indium-gallium-arsenic and/or the material of the p-type ohmic layer contacts indium-gallium-arsenic or indium phosphide. USE - Visible-near infrared wide spectrum photoelectric detector. ADVANTAGE - The method is an epitaxial growth inorganic infrared detector structure, ion implantation to achieve p-type doping, wet etching/dry etching for preparing wet etching channel for removing substrate, transferring inorganic thin film device to flexible substrate of evaporating transparent conductive electrode to obtain a large size, capable of detecting flexible indium gallium arsenic PIN type visible-near infrared wide spectrum photoelectric detector of 0.7-1.7 μm near-infrared wave band, and providing a reusable preparation method for indium phosphide substrate, and providing an effective, feasible, and low-cost solution for industrialization of inorganic flexible visible-near-infrared wide-spectrum photodetector devices. DETAILED DESCRIPTION - A visible-near infrared wide spectrum photoelectric detector comprises a flexible substrate, a transparent conductive electrode, an n-type indium phosphide etch stop layer, an active layer, p-type indium phosphide layer, a p-type ohmic contact layer, an upper electrode layer, and a silicon nitride of formula: SiNxpassivation layer covering the p-type ohmic contact layer and the partial upper electrode layer. The visible-near infrared wide spectrum photoelectric detector is an independent device and/or integrated in the circuit. The material of active layer is indium-gallium-arsenic (preferred) or indium-gallium-arsenic-phosphorus, and the material of p-type ohmic contact layer is indium-gallium-arsenide or indium phosphide. Where, x is the ratio of nitrogen ion and silicon ion. An INDEPENDENT CLAIM is included for preparation of visible-near-infrared broad-spectrum photodetector, which involves (s1) epitaxially growing a buffer layer, a sacrificial layer, a corrosion stop layer, an active layer, an ion implantation layer, and an ion contact layer in sequence on the flexible substrate to obtain an indium gallium arsenic PIN wafer, (s2) performing ion implantation or diffusion to indium gallium arsenic PIN wafer, preparing an upper electrode layer on the surface of indium gallium arsenic PIN wafer, preferably the upper electrode layer in the range of 3×3 mm units, comprising two parallel large electrode strips and 15 parallel small electrode strips, and two electrode strips are vertical to each other, using as upper electrode and supporting frame on flexible device surface, (s3) preparing large-scale device unit table and etching and/or etching hole mask patterns, and etching the large-sized device unit table, etching and/or etching holes on the surface of the wafer to the surface of sacrificial layer, (s4) depositing a silicon nitride passivation layer on the surface of wafer for covering the surface of wafer and etching and/or etching the side wall of hole, (s5)preparing etching table surface, large electrode, small etching hole mask pattern, and etching the wafer, table surface and small etching hole to the sacrificial layer surface, forming sacrificial layer channels, and etching the large electrode position for exposing the upper electrode layer, (s6) etching the sacrificial layer, separating the visible-near infrared wide spectrum photoelectric detector from indium phosphide substrate and the buffer layer, recycling the indium phosphide substrate, the buffer layer, and recycling the indium phosphide substrate for later use, and (s7) transferring the device unit stripped from the step (s6) to the flexible substrate with transparent conductive electrode layer evaporated on the surface. The preparation method of upper electrode layer is one or more of photolithography, laser direct writing, electron beam exposure, electron beam evaporation, and sputtering and in step (s2), the thickness of the plating on the upper electrode layer is not less than 100 nm, preferably not less than 400 nm.