▎ 摘　　要

NOVELTY - A copper-containing substrate (12a) is heated to an exposure temperature and exposed to a carbon-containing precursor gas at the exposure temperature for a predetermined period of time to dissolve carbon atoms into the substrate and saturate the substrate with carbon atoms. The obtained substrate is cooled such that the dissolved carbon atoms (16) are segregated from the substrate, to form a graphene film (20) on the surface(s) (10) of the substrate. The copper-containing substrate is selected based on its thickness to control the depth of the graphene film. USE - Method for forming graphene film. Uses include but are not limited to flexible electronics, laser, biosensor, atomically thin protective coating, hydrogen storage and energy storage applications. ADVANTAGE - The method enables formation of thin graphene film with high carrier mobility and quality, by simple process. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view illustrating segregation of dissolved carbon atoms to form graphene film on the planar surface of the copper-containing substrate. Surface (10) Copper-containing substrate (12a) Dissolved carbon atoms (16) Graphene film (20)