▎ 摘　　要

NOVELTY - Sensor comprises a doped silicon layer, a graphene layer on the doped silicon layer, a molecularly imprinted polymer (MIP) layer derived from a MIP monomer and functional monomer on the graphene layer, and electrodes in operative arrangement with the MIP layer and configured to provide a signal indicative of a resistance, or sensor comprises a doped silicon layer having an etched surface, a graphene layer on the etched surface, where the graphene layer comprises graphene and potassium ferrocyanide, a MIP layer of poly(pyrrole-co-ethylene glycol dimethacrylate-co-methacrylic acid) or poly(pyrrole-co-dopamine) on the graphene layer, and electrodes in operative arrangement with the MIP layer and configured to provide a signal indicative of a resistance. USE - The sensor is useful in detector and detecting viral infection, and used in used in hospitals, and airports. ADVANTAGE - The sensor is selective for analyte associated with the viral infection, accurate, consistent, and selective, and the measured resistance is indicative of presence or absence of the viral infection in the subject, and detects virus in about 10 seconds. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a detector comprising the sensor, and a voltage source configured to apply a voltage to the MIP layer; (2) a method for detecting an analyte in a sample, involving measuring the resistance of the sensor that is in contact with the sample to obtain a measured resistance, where the sensor is selective for the analyte, and the measured resistance is indicative of presence or absence of the analyte in the sample; (3) a method for detecting a viral infection in a subject, involving measuring the resistance of the sensor that is in contact with a sample from a subject to obtain a measured resistance, where the sensor is selective for an analyte associated with the viral infection, and the measured resistance is indicative of presence or absence of the viral infection in the subject; and (4) a method for fabricating the sensor, involving forming a graphene layer on a doped silicon layer, and forming a MIP layer derived from a MIP monomer and functional monomer on the graphene layer.