• 专利标题:   Graphene substrate comprises graphene layer structure directly on metal oxide layer which is directly on support layer.
  • 专利号:   WO2023285194-A1
  • 发明人:   DIXON S, KAINTH J, GUINEY I, BADCOCK T J
  • 专利权人:   PARAGRAF LTD
  • 国际专利分类:   H01L021/02, H01L021/20
  • 专利详细信息:   WO2023285194-A1 19 Jan 2023 H01L-021/20 202311 Pages: 27 English
  • 申请详细信息:   WO2023285194-A1 WOEP068476 04 Jul 2022
  • 优先权号:   GB010031, WOEP056398

▎ 摘  要

NOVELTY - A graphene substrate comprises a graphene layer structure is provided directly on a metal oxide layer and the metal oxide layer is provided directly on a support layer. The metal oxide layer has a thickness of less than 5 nm and is selected from aluminum oxide, hafnium oxide, magnesium oxide, magnesium aluminate, tantalum pentoxide, yttrium oxide, zirconium dioxide and yttria-stabilized zirconia, and the support layer is boron nitride, aluminum nitride, gallium nitride, silicon carbide and/or diamond. USE - Graphene substrate for electrical device (claimed) such as electro-optic modulator, transistor e.g. radio frequency graphene field effect transistors and biosensor e.g. Flail effect sensor. ADVANTAGE - The graphene substrate has improved electronic properties, and high-quality graphene with excellent uniformity and constant number of layers across its whole area on the substrate without additional carbon fragments or islands. The method is more reliable and more efficient for the industrial manufacture of graphene, particularly large area graphene on non-metallic substrates. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for formation of graphene substrate.