▎ 摘　　要

NOVELTY - A wax-based field effect transistor (100) includes a wax substrate sheet (102) with a first surface (102a) and a second surface (102b), where the wax substrate is a gate dielectric, and a metal gate (104) disposed on the first surface of the wax sheet, an active layer (110) coated on the second surface of the wax sheet, and a source electrode (106) and a drain electrode (108) disposed on the active layer-coated second surface of the wax sheet, where electrodes are in contact with at least a portion of the active layer. USE - Wax-based field effect transistor used for electronic device (claimed). ADVANTAGE - The transistor is easy to fabricate, has good electrical conductivity, and can be easily disintegrated using thermal energy after its usage is complete. The disintegration of the transistor is environmentally less harmful than prior art systems and further the wax may be filtered out and reused. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method of fabricating the wax-based field effect transistor, which involves: (a) forming wax substrate sheet having first and second surface by pouring melted wax on a template and allowing the wax sheet to solidify; (b) depositing a metal gate on the first surface of the wax sheet; (c) texturing the second surface of the wax sheet and coating textured surface with active layer; and (d) depositing a source electrode and a drain electrode on the active layer coated second surface of the wax sheet, such that the electrodes are in contact with at least a portion of the active layer. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the field effect transistor. 100Wax-based field effect transistor 102Wax substrate sheet 102aFirst surface 102bSecond surface 104Metal gate 106Source electrode 108Drain electrode 110Active layer