▎ 摘　　要

NOVELTY - Preparing radio frequency transistor with self-aligned structure comprises providing substrate, growing graphene layer on upper surface of substrate, spin coating two photoresist with different photosensitive properties on upper surface of graphene layer, performing photolithography, depositing aluminum and gold, naturally oxidizing aluminum surface into aluminum oxide dielectric layer in air atmosphere, depositing gold form self-aligned structure, spin coating transfer glue on surface of self-aligned structure, attaching transition rigid substrate on transfer glue in vacuum environment, peeling off transition temporary rigid substrate and substrate by mechanical peeling, peeling self-aligned structure and laminated structure formed by transfer glue off from substrate, where the laminated structure and target substrate finished channel material pre-patterned finish Van der Waals bonding, separating transition temporary rigid substrate by de-bonding, cleaning and removing transfer glue. USE - The method is useful for preparing radio frequency transistor with self-aligned structure. ADVANTAGE - The method greatly improves the electrical performance of the device, is compatible with the semiconductor process, and is suitable for scale application. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of a preparation method of radio frequency transistor with self-aligned structure. (Drawing includes non-English language text).